MicReD Product Suite
Overview
The award-winning MicReD Industrial Power Tester 1500A for power cycling and thermal testing simulates and measures lifetime performance and reliability in electronics components that are used in the automotive and transportation and power generation industries as well as in renewable energy applications such as wind turbines.功率测试仪1500A现在有两种配置——3通道和12通道，可测量多达12个设备。
Featured Resources
""我已经看到许多内部实现的电力测试系统。Compared to those solutions Mentor Graphics' Power Tester 1500A is a fully-featured professionally packaged industrial system.它检测热堆的变化以及循环期间的相关电性能，allowing the evolution of the competing damage mechanisms to be understood.""
Dipl.-Phys.Thomas Harder,General Manager,,,ECPE European Center for Power Electronics e.V.
The only system offering power cycling and thermal transient measurement with structure function analysis
The Power Tester 1500A is the only commercially available thermal testing product that combines both power cycling and thermal transient measurements with structure function analysis.Obtain results such as failure in progress,number of cycles,and failure cause quickly.
Conduct continuous power cycling until failure
The MicReD Industrial Power Tester 1500A can power modules through tens of thousands—potentially millions—of cycles while providing"实时“failure-in-progress data for diagnostics thereby significantly reducing test and lab diagnosis time and eliminating the need for post-mortem or destructive failure analysis.当远离测试设施时，使用遥控器访问功能并监控结果。
Easy to use field-tested technology
The Power Tester 1500A platform is based on the Mentor Graphics® T3Ster® advanced thermal testing hardware solution which is used worldwide for accurate thermal characterization across a wide range of industries.它还具有触摸屏设置和控制功能，可供专家和生产人员使用。
广泛的供电策略
访问各种供电策略，如恒定的电源开/关时间，constant case temperature swing,and constant junction temperature rise during operation to simulate realistic operating conditions.
测试各种电力电子设备
功率测试仪1500可以测试各种功率电子器件，包括金属氧化物半导体场效应晶体管（MOSFET）。绝缘栅双极晶体管（IGBT）和功率二极管。根据配置，up to 12 devices can now be measured.The top and bottom transistors in half-bridge structures can be measured at the same time.
